This stress test is intended to determine the ability of an EEPROM integrated circuit or an integrated circuit with an EEPROM module (such as a microprocessor) to sustain repeated data changes without failure (program/erase endurance) and to retain data for the expected life of the EEPROM (data retention). This Standard specifies the procedural requirements for performing valid endurance and retention tests based on a qualification specification. Endurance and retention qualification specifications (for cycle counts, durations, temperatures, and sample sizes) are specified in JESD47 or may be developed using knowledge-based methods as in JESD94.

This stress test does not replace other stress test qualification requirements. The program/erase endurance and data retention test for qualification and monitoring, using the parameter levels specified in JESD47, is considered destructive. Lesser test parameter levels (e.g., of temperature, number of cycles, retention bake duration) may be used for screening as long as these parameter levels have been verified by the device manufacturer to be nondestructive; this can be performed anywhere from wafer level to finished device.