DLA MIL-PRF-19500/756
DLA ML-PRF-19500756 2010-APR-28 SEMCONDUCTOR DEVCE FELD EFFECT TRANSSTOR N-CHANNEL RADATON HARDENED TOTAL DOSE AND SNGLE EVENT EFFECTS LOGC-LEVEL SLCON TYPES 2N7607T3 AND 2N7606U3 JANTXVR JANTXVF JANSR AND JANSF
DLA ML-PRF-19500756 2010-APR-28 SEMCONDUCTOR DEVCE FELD EFFECT TRANSSTOR N-CHANNEL RADATON HARDENED TOTAL DOSE AND SNGLE EVENT EFFECTS LOGC-LEVEL SLCON TYPES 2N7607T3 AND 2N7606U3 JANTXVR JANTXVF JANSR AND JANSF
This specification covers the performance requirements for a N-channel, enhancement-mode, radiation hardened (total dose and single event effects (SEE)), low-threshold logic level, MOSFET, transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC die versions.