DLA MIL-PRF-19500/759REV A
DLA ML-PRF-19500759REV A 2012-JAN-20 SEMCONDUCTOR DEVCE FELD EFFECT RADATON HARDENED TOTAL DOSE AND SNGLE EVENT EFFECTS DUAL TRANSSTOR N-CHANNEL AND P-CHANNEL LOGC-LEVEL SLCON TYPES 2N7632UD JANTXVR F AND JANSR F
DLA ML-PRF-19500759REV A 2012-JAN-20 SEMCONDUCTOR DEVCE FELD EFFECT RADATON HARDENED TOTAL DOSE AND SNGLE EVENT EFFECTS DUAL TRANSSTOR N-CHANNEL AND P-CHANNEL LOGC-LEVEL SLCON TYPES 2N7632UD JANTXVR F AND JANSR F
This specification covers the performance requirements for dual N-channel and P-channel, enhancement-mode, low-threshold logic level, MOSFET, radiation hardened (total dose and single event effects(SEE)), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC die versions.