DLA MIL-PRF-19500/753A
DLA ML-PRF-19500753A 2010-MAY-19 SEMCONDUCTOR DEVCE FELD EFFECT RADATON HARDENED TOTAL DOSE AND SNGLE EVENT EFFECTS TRANSSTOR N-CHANNEL SLCON TYPES 2N7580T1 2N7582T1 2N7584T1 AND 2N7586T1 JANTXVR JANTXVF JANSR AND JANSF
DLA ML-PRF-19500753A 2010-MAY-19 SEMCONDUCTOR DEVCE FELD EFFECT RADATON HARDENED TOTAL DOSE AND SNGLE EVENT EFFECTS TRANSSTOR N-CHANNEL SLCON TYPES 2N7580T1 2N7582T1 2N7584T1 AND 2N7586T1 JANTXVR JANTXVF JANSR AND JANSF
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS).