DLA MIL-PRF-19500/758
DLA ML-PRF-19500758 2010-JUN-28 SEMCONDUCTOR DEVCE FELD EFFECT RADATON HARDENED TOTAL DOSE AND SNGLE EVENT EFFECTS TRANSSTOR N-CHANNEL SLCON TYPES 2N7609U8 AND 2N7609U8C JANTXVR F AND G AND JANSR F AND G
DLA ML-PRF-19500758 2010-JUN-28 SEMCONDUCTOR DEVCE FELD EFFECT RADATON HARDENED TOTAL DOSE AND SNGLE EVENT EFFECTS TRANSSTOR N-CHANNEL SLCON TYPES 2N7609U8 AND 2N7609U8C JANTXVR F AND G AND JANSR F AND G
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC die versions.