DLA ML-PRF-19500746B 2011-JUN-24 SEMCONDUCTOR DEVCE FELD EFFECT RADATON HARDENED TOTAL DOSE AND SNGLE EVENT EFFECTS TRANSSTOR N-CHANNEL SLCON TYPES 2N7587U3 2N7587U3C 2N7589U3 2N7589U3C 2N7591U3 2N7591U3C 2N7593U3 AND 2N7593U3C JANTXVR JANTXVF JANSR AND JANSF
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS).
