DLA MIL-PRF-19500/749 AB
DLA ML-PRF-19500749 AB 2010-MAY-21 SEMCONDUCTOR DEVCE FELD EFFECT TRANSSTOR P-CHANNEL RADATON HARDENED TOTAL DOSE AND SNGLE EVENT EFFECTS SLCON TYPES 2N7506U8 AND 2N7506U8C JANTXVR JANTXVF JANSR AND JANSF
DLA ML-PRF-19500749 AB 2010-MAY-21 SEMCONDUCTOR DEVCE FELD EFFECT TRANSSTOR P-CHANNEL RADATON HARDENED TOTAL DOSE AND SNGLE EVENT EFFECTS SLCON TYPES 2N7506U8 AND 2N7506U8C JANTXVR JANTXVF JANSR AND JANSF
This specification covers the performance requirements for P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC die versions.