DLA ML-PRF-19500732B 2010-APR-23 SEMCONDUCTOR DEVCE FELD EFFECT RADATON HARDENED TOTAL DOSE AND SNGLE EVENT EFFECTS TRANSSTORS P-CHANNEL SLCON TYPES 2N7519U3 2N7519U3C 2N7519T3 2N7520U3 2N7520U3C AND 2N7520T3 JANTXVR F AND JANSR F
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC die versions.
