DLA MIL-PRF-19500/747A
DLA ML-PRF-19500747A 2010-AUG-12 SEMCONDUCTOR DEVCE FELD EFFECT TRANSSTOR N-CHANNEL RADATON HARDENED TOTAL DOSE AND SNGLE EVENT EFFECTS SLCON TYPE 2N7504T2 JANTXVR JANTXVF JANTXVG JANTXVH JANSF JANSG JANSR AND JANSH
DLA ML-PRF-19500747A 2010-AUG-12 SEMCONDUCTOR DEVCE FELD EFFECT TRANSSTOR N-CHANNEL RADATON HARDENED TOTAL DOSE AND SNGLE EVENT EFFECTS SLCON TYPE 2N7504T2 JANTXVR JANTXVF JANTXVG JANTXVH JANSF JANSG JANSR AND JANSH
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS).