DLA MIL-PRF-19500/739
DLA ML-PRF-19500739 2006-JAN-24 SEMCONDUCTOR DEVCE FELD EFFECT RADATON HARDENED TOTAL DOSE AND SNGLE EVENT EFFECTS QUAD TRANSSTOR N-CHANNEL AND P-CHANNEL SLCON TYPES 2N7518 AND 2N7518U JANTXVR F AND JANSR F
DLA ML-PRF-19500739 2006-JAN-24 SEMCONDUCTOR DEVCE FELD EFFECT RADATON HARDENED TOTAL DOSE AND SNGLE EVENT EFFECTS QUAD TRANSSTOR N-CHANNEL AND P-CHANNEL SLCON TYPES 2N7518 AND 2N7518U JANTXVR F AND JANSR F
This specification covers the performance requirements for quad N-channel and P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects(SEE)), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS).