DLA MIL-PRF-19500/704C
DLA ML-PRF-19500704C 2010-DEC-13 SEMCONDUCTOR DEVCE FELD EFFECT RADATON HARDENED TOTAL DOSE AND SNGLE EVENT EFFECTS TRANSSTOR N-CHANNEL SLCON TYPES 2N7485U3 2N7486U3 AND 2N7487U3 JANTXVR AND JANSR
DLA ML-PRF-19500704C 2010-DEC-13 SEMCONDUCTOR DEVCE FELD EFFECT RADATON HARDENED TOTAL DOSE AND SNGLE EVENT EFFECTS TRANSSTOR N-CHANNEL SLCON TYPES 2N7485U3 2N7486U3 AND 2N7487U3 JANTXVR AND JANSR
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC die versions.