DLA MIL-PRF-19500/703B
DLA ML-PRF-19500703B 2010-AUG-30 SEMCONDUCTOR DEVCE FELD EFFECT RADATON HARDENED TOTAL DOSE AND SNGLE EVENT EFFECTS TRANSSTOR N-CHANNEL SLCON TYPES 2N7479U3 2N7480U3 AND 2N7481U3 JANTXVR F G AND H AND JANSR F G AND H
DLA ML-PRF-19500703B 2010-AUG-30 SEMCONDUCTOR DEVCE FELD EFFECT RADATON HARDENED TOTAL DOSE AND SNGLE EVENT EFFECTS TRANSSTOR N-CHANNEL SLCON TYPES 2N7479U3 2N7480U3 AND 2N7481U3 JANTXVR F G AND H AND JANSR F G AND H
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS).