DLA MIL-PRF-19500/702C
DLA ML-PRF-19500702C 2010-MAY-21 SEMCONDUCTOR DEVCE FELD EFFECT RADATON HARDENED TOTAL DOSE AND SNGLE EVENT EFFECTS TRANSSTOR N-CHANNEL SLCON TYPES 2N7482T3 2N7483T3 AND 2N7484T3 JANTXVR F G AND H AND JANSR F G AND H
DLA ML-PRF-19500702C 2010-MAY-21 SEMCONDUCTOR DEVCE FELD EFFECT RADATON HARDENED TOTAL DOSE AND SNGLE EVENT EFFECTS TRANSSTOR N-CHANNEL SLCON TYPES 2N7482T3 2N7483T3 AND 2N7484T3 JANTXVR F G AND H AND JANSR F G AND H
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC die versions.