DLA MIL-PRF-19500/712C
DLA ML-PRF-19500712C 2010-OCT-27 SEMCONDUCTOR DEVCE FELD EFFECT RADATON HARDENED TOTAL DOSE AND SNGLE EVENT EFFECTS TRANSSTORS P-CHANNEL SLCON TYPES 2N7545U3 2N7546U3 2N7547T3 AND 2N7548T3 JANTXVR F G H AND JANSR F G H
DLA ML-PRF-19500712C 2010-OCT-27 SEMCONDUCTOR DEVCE FELD EFFECT RADATON HARDENED TOTAL DOSE AND SNGLE EVENT EFFECTS TRANSSTORS P-CHANNEL SLCON TYPES 2N7545U3 2N7546U3 2N7547T3 AND 2N7548T3 JANTXVR F G H AND JANSR F G H
This specification covers the performance requirements for an P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC die versions.