DLA MIL-PRF-19500/701B
DLA ML-PRF-19500701B 2011-JAN-18 SEMCONDUCTOR DEVCE FELD EFFECT RADATON HARDENED TOTAL DOSE AND SNGLE EVENT EFFECTS TRANSSTOR N-CHANNEL SLCON TYPES 2N7491T2 2N7492T2 AND 2N7493T2 JANTXVR F G AND H AND JANSR F G AND H
DLA ML-PRF-19500701B 2011-JAN-18 SEMCONDUCTOR DEVCE FELD EFFECT RADATON HARDENED TOTAL DOSE AND SNGLE EVENT EFFECTS TRANSSTOR N-CHANNEL SLCON TYPES 2N7491T2 2N7492T2 AND 2N7493T2 JANTXVR F G AND H AND JANSR F G AND H
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and Single Event Effects (SEE)), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS).