DLA MIL-PRF-19500/700B
DLA ML-PRF-19500700B 2011-MAY-03 SEMCONDUCTOR DEVCE FELD EFFECT RADATON HARDENED TOTAL DOSE AND SNGLE EVENT EFFECTS TRANSSTOR N-CHANNEL SLCON TYPES 2N7494U5 2N7495U5 AND 2N7496U5 JANTXVR F G AND H AND JANSR F G AND H
DLA ML-PRF-19500700B 2011-MAY-03 SEMCONDUCTOR DEVCE FELD EFFECT RADATON HARDENED TOTAL DOSE AND SNGLE EVENT EFFECTS TRANSSTOR N-CHANNEL SLCON TYPES 2N7494U5 2N7495U5 AND 2N7496U5 JANTXVR F G AND H AND JANSR F G AND H
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (Total Dose and Single Event Effects (SEE)), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS).