DLA MIL-PRF-19500/698D
DLA ML-PRF-19500698D 2010-NOV-01 SEMCONDUCTOR DEVCE FELD EFFECT RADATON HARDENED TOTAL DOSE AND SNGLE EVENT EFFECTS TRANSSTOR N-CHANNEL SLCON TYPES 2N7470T1 AND 2N7471T1 JANTXVR F G AND H AND JANSR F G AND H
DLA ML-PRF-19500698D 2010-NOV-01 SEMCONDUCTOR DEVCE FELD EFFECT RADATON HARDENED TOTAL DOSE AND SNGLE EVENT EFFECTS TRANSSTOR N-CHANNEL SLCON TYPES 2N7470T1 AND 2N7471T1 JANTXVR F G AND H AND JANSR F G AND H
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC die versions.