DLA MIL-PRF-19500/697D
DLA ML-PRF-19500697D 2011-JAN-14 SEMCONDUCTOR DEVCE FELD EFFECT RADATON HARDENED TOTAL DOSE AND SNGLE EVENT EFFECTS TRANSSTOR N-CHANNEL SLCON TYPE 2N7478T1 JANTXVR F G AND H AND JANSR F G AND H
DLA ML-PRF-19500697D 2011-JAN-14 SEMCONDUCTOR DEVCE FELD EFFECT RADATON HARDENED TOTAL DOSE AND SNGLE EVENT EFFECTS TRANSSTOR N-CHANNEL SLCON TYPE 2N7478T1 JANTXVR F G AND H AND JANSR F G AND H
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects, (SEE)), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC die versions.