This specification covers the performance requirements for an N-channel, enhancement-mode power MOSFET transistor with radiation hardened total dose and single event (SEE) effects ratings, with avalanche energy maximum rating (E_AS) and maximum avalanche current (I_AS). Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500. See 6.5 for JANHC and JANKC die versions.