DLA MIL-PRF-19500/687B
DLA ML-PRF-19500687B 2008-OCT-03 SEMCONDUCTOR DEVCE FELD EFFECT RADATON HARDENED TOTAL DOSE AND SNGLE EVENT EFFECTS TRANSSTOR N-CHANNEL SLCON TYPES 2N7509 2N7510 AND 2N7511 JANTXVD R AND JANSD R
DLA ML-PRF-19500687B 2008-OCT-03 SEMCONDUCTOR DEVCE FELD EFFECT RADATON HARDENED TOTAL DOSE AND SNGLE EVENT EFFECTS TRANSSTOR N-CHANNEL SLCON TYPES 2N7509 2N7510 AND 2N7511 JANTXVD R AND JANSD R
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE) characterization), power transistor intended for use in high density power switching applications. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500.