DLA MIL-PRF-19500/685E
DLA ML-PRF-19500685E 2010-APR-22 SEMCONDUCTOR DEVCE FELD EFFECT RADATON HARDENED TRANSSTOR N-CHANNEL SLCON TYPES 2N7475T1 2N7476T1 AND 2N7477T1 TOTAL DOSE AND SNGLE EVENT EFFECTS JANTXVR AND JANSR
DLA ML-PRF-19500685E 2010-APR-22 SEMCONDUCTOR DEVCE FELD EFFECT RADATON HARDENED TRANSSTOR N-CHANNEL SLCON TYPES 2N7475T1 2N7476T1 AND 2N7477T1 TOTAL DOSE AND SNGLE EVENT EFFECTS JANTXVR AND JANSR
This specification covers the performance requirements for N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500. See 6.5 for JANHC and JANKC die versions.