DLA MIL-PRF-19500/676D
DLA ML-PRF-19500676D 2007-DEC-11 SEMCONDUCTOR DEVCE FELD EFFECT RADATON HARDENED TOTAL DOSE AND SNGLE EVENT EFFECTS TRANSSTORS N-CHANNEL SLCON TYPES 2N7463T2 AND 2N7464T2 AND U5 SUFFXES JANTXVR AND JANSR
DLA ML-PRF-19500676D 2007-DEC-11 SEMCONDUCTOR DEVCE FELD EFFECT RADATON HARDENED TOTAL DOSE AND SNGLE EVENT EFFECTS TRANSSTORS N-CHANNEL SLCON TYPES 2N7463T2 AND 2N7464T2 AND U5 SUFFXES JANTXVR AND JANSR
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS).