DLA MIL-PRF-19500/684E
DLA ML-PRF-19500684E 2010-OCT-27 SEMCONDUCTOR DEVCE TRANSSTOR FELD EFFECT SLCON N-CHANNEL RADATON HARDENED TOTAL DOSE AND SNGLE EVENT EFFECTS TYPES 2N7472U2 2N7473U2 AND 2N7474U2 JANTXVR AND JANSR
DLA ML-PRF-19500684E 2010-OCT-27 SEMCONDUCTOR DEVCE TRANSSTOR FELD EFFECT SLCON N-CHANNEL RADATON HARDENED TOTAL DOSE AND SNGLE EVENT EFFECTS TYPES 2N7472U2 2N7473U2 AND 2N7474U2 JANTXVR AND JANSR
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC die versions.