DLA MIL-PRF-19500/675D
DLA ML-PRF-19500675D 2008-MAR-12 SEMCONDUCTOR DEVCE FELD EFFECT RADATON HARDENED TOTAL DOSE AND SNGLE EVENT EFFECTS TRANSSTORS N-CHANNEL SLCON TYPES 2N7463T2 2N7464T2 2N7463U5 AND 2N7464U5 JANTXVR AND JANSR
DLA ML-PRF-19500675D 2008-MAR-12 SEMCONDUCTOR DEVCE FELD EFFECT RADATON HARDENED TOTAL DOSE AND SNGLE EVENT EFFECTS TRANSSTORS N-CHANNEL SLCON TYPES 2N7463T2 2N7464T2 2N7463U5 AND 2N7464U5 JANTXVR AND JANSR
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and Single Event Effects (SEE)), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS).