DLA MIL-PRF-19500/655E
DLA ML-PRF-19500655E 2012-FEB-14 SEMCONDUCTOR DEVCE FELD EFFECT RADATON HARDENED TOTAL DOSE AND SNGLE EVENT EFFECTS TRANSSTOR P-CHANNEL SLCON TYPES 2N7424U 2N7425U AND 2N7426U JANTXVR AND F AND JANSR AND F
DLA ML-PRF-19500655E 2012-FEB-14 SEMCONDUCTOR DEVCE FELD EFFECT RADATON HARDENED TOTAL DOSE AND SNGLE EVENT EFFECTS TRANSSTOR P-CHANNEL SLCON TYPES 2N7424U 2N7425U AND 2N7426U JANTXVR AND F AND JANSR AND F
This specification covers the performance requirements for a P-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC die versions.