DLA MIL-PRF-19500/634C
DLA ML-PRF-19500634C 2008-SEP-12 SEMCONDUCTOR DEVCE FELD EFFECT RADATON HARDENED TOTAL DOSE AND SNGLE EVENT EFFECTS TRANSSTORS N-CHANNEL SLCON TYPES 2N7405 2N7406 2N7407 AND 2N7408 JANSD AND JANSR
DLA ML-PRF-19500634C 2008-SEP-12 SEMCONDUCTOR DEVCE FELD EFFECT RADATON HARDENED TOTAL DOSE AND SNGLE EVENT EFFECTS TRANSSTORS N-CHANNEL SLCON TYPES 2N7405 2N7406 2N7407 AND 2N7408 JANSD AND JANSR
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effect (SEE) characterization), power transistor intended for use in high density power switching applications. One level of product assurance is provided for each device type as specified in MIL-PRF-19500.