DLA MIL-PRF-19500/652B
DLA ML-PRF-19500652B 2008-SEP-21 SEMCONDUCTOR DEVCE TRANSSTOR HGH VOLTAGE FELD EFFECT N-CHANNEL SLCON TYPE 2N7387 AND 2N7387U1 JAN JANTX JANTXV AND JANS
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This specification covers the performance requirements for a high voltage N-channel, enhancementmode, power MOSFET transistor, with avalanche energy maximum ratings (EAS ) and maximum avalanche current (IAS). Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.