DLA MIL-PRF-19500/630F
DLA ML-PRF-19500630F 2012-JAN-27 SEMCONDUCTOR DEVCE FELD EFFECT RADATON HARDENED TRANSSTOR P-CHANNEL SLCON TYPES 2N7389 2N7390 2N7389U 2N7389U5 AND 2N7390U 2N7390U5 JANTXV R AND F AND JANS R AND F
DLA ML-PRF-19500630F 2012-JAN-27 SEMCONDUCTOR DEVCE FELD EFFECT RADATON HARDENED TRANSSTOR P-CHANNEL SLCON TYPES 2N7389 2N7390 2N7389U 2N7389U5 AND 2N7390U 2N7390U5 JANTXV R AND F AND JANS R AND F
This specification covers the performance requirements for a P-channel, radiation hardened, enhancement mode, MOSFET, power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy ratings (EAS) and maximum avalanche current (IAS). See 6.4 for JANHC and JANKC die versions.