DLA MIL-PRF-19500/615E
DLA ML-PRF-19500615E 2012-MAR-28 SEMCONDUCTOR DEVCE FELD EFFECT RADATON HARDENED TOTAL DOSE AND SNGLE EVENT EFFECTS TRANSSTORS P-CHANNEL SLCON TYPES 2N7382 AND 2N7383 JANTXV M D R AND F AND JANS M D R AND F
DLA ML-PRF-19500615E 2012-MAR-28 SEMCONDUCTOR DEVCE FELD EFFECT RADATON HARDENED TOTAL DOSE AND SNGLE EVENT EFFECTS TRANSSTORS P-CHANNEL SLCON TYPES 2N7382 AND 2N7383 JANTXV M D R AND F AND JANS M D R AND F
This specification covers the performance requirements for a P-channel, radiation hardened, (total dose and single event effects (SEE)),enhancement mode, MOSFET, power transistor intended for use in high density power switching applications. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy ratings (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC die versions.