This specification covers the performance requirements for an N-channel, radiation hardened, (total dose and single event effects (SEE)) enhancement mode, MOSFET, power transistors intended for use in high density power switching applications. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy ratings (E_AS) and maximum avalanche current (I_AS). See 6.5 for JANHC and JANKC die versions.