DLA MIL-PRF-19500/595J
DLA ML-PRF-19500595J 2010-OCT-25 SEMCONDUCTOR DEVCE REPETTVE AVALANCHE FELD EFFECT TRANSSTOR P-CHANNEL SLCON TYPES 2N7236 2N7237 2N7236U AND 2N7237U JAN JANTX JANTXV JANS JANHC AND JANKC
DLA ML-PRF-19500595J 2010-OCT-25 SEMCONDUCTOR DEVCE REPETTVE AVALANCHE FELD EFFECT TRANSSTOR P-CHANNEL SLCON TYPES 2N7236 2N7237 2N7236U AND 2N7237U JAN JANTX JANTXV JANS JANHC AND JANKC
This specification covers the performance requirements for an P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die, with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR).