DLA MIL-PRF-19500/592F
DLA ML-PRF-19500592F 2010-JUN-02 SEMCONDUCTOR DEVCE REPETTVE AVALANCHE FELD EFFECT TRANSSTOR N-CHANNEL SLCON TYPES 2N7224 2N7225 2N7227 2N7228 2N7224U 2N7225U 2N7227U AND 2N7228U JAN JANTX JANTXV JANS JANHC AND JANKC
DLA ML-PRF-19500592F 2010-JUN-02 SEMCONDUCTOR DEVCE REPETTVE AVALANCHE FELD EFFECT TRANSSTOR N-CHANNEL SLCON TYPES 2N7224 2N7225 2N7227 2N7228 2N7224U 2N7225U 2N7227U AND 2N7228U JAN JANTX JANTXV JANS JANHC AND JANKC
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die, with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR).