DLA MIL-PRF-19500/557J
DLA ML-PRF-19500557J 2010-JUL-19 SEMCONDUCTOR DEVCE FELD EFFECT TRANSSTOR N-CHANNEL SLCON TYPES 2N6796 2N6796U 2N6798 2N6798U 2N6800 2N6800U 2N6802 AND 2N6802U JAN JANTX JANTXV JANS JANHC AND JANKC
DLA ML-PRF-19500557J 2010-JUL-19 SEMCONDUCTOR DEVCE FELD EFFECT TRANSSTOR N-CHANNEL SLCON TYPES 2N6796 2N6796U 2N6798 2N6798U 2N6800 2N6800U 2N6802 AND 2N6802U JAN JANTX JANTXV JANS JANHC AND JANKC
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.