DLA MIL-PRF-19500/543M
DLA ML-PRF-19500543M 2011-SEP-22 SEMCONDUCTOR DEVCE FELD EFFECT TRANSSTORS N-CHANNEL SLCON REPETTVE AVALANCHE TYPES 2N6764 2N6764T1 2N6766 2N6766T1 2N6768 2N6768T1 2N6770 AND 2N6770T1 JAN JANTX JANTXV JANS JANHC AND JANKC
DLA ML-PRF-19500543M 2011-SEP-22 SEMCONDUCTOR DEVCE FELD EFFECT TRANSSTORS N-CHANNEL SLCON REPETTVE AVALANCHE TYPES 2N6764 2N6764T1 2N6766 2N6766T1 2N6768 2N6768T1 2N6770 AND 2N6770T1 JAN JANTX JANTXV JANS JANHC AND JANKC
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance for each unencapsulated die, with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR).