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DLA MIL-PRF-19500/455J

DLA ML-PRF-19500455J 2011-JUN-29 SEMCONDUCTOR DEVCE TRANSSTOR NPN SLCON POWER SWTCHNG TYPES 2N5664 2N5665 2N5666 2N5666S 2N5666U3 2N5667 AND 2N5667S JAN JANTX JANTXV JANS JANSM JANSD JANSP JANSL JANSR JANSF JANSG JANSH JANHC AND JANKCA JANKCB JANKCAM JANKCAD JANKCAP JANKCAL JANKCAR JANKCAF JANKCAG and JANKCAH

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This specification covers the performance requirements for NPN, silicon, power transistors for use in high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each un-encapsulated device type as specified in MIL-PRF-19500. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANS product assurance level. Radiation hardness assurance (RHA) level designators; "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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